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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-3 package *High voltatge *High speed APPLICATIONS *For high voltatge ,high speed and power switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
2SC2981
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 8 100 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=5mA ; RBE=7 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCB=750V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 800 900 7
2SC2981
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V V
1.0 1.5 0.1 0.1
V V mA mA
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2981
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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